Title:
THREE-DIMENSIONAL MEMORY DEVICE HAVING EPITAXIALLY-GROWN SEMICONDUCTOR CHANNEL AND METHOD FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/056520
Kind Code:
A1
Abstract:
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, and a memory string extending vertically through the memory stack. The memory string includes a single crystalline silicon plug in a lower portion of the memory string, a memory film above the single crystalline silicon plug and along a sidewall of the memory string, and a single crystalline silicon channel over the memory film and along the sidewall of the memory string.
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Inventors:
ZHU HONGBIN (CN)
Application Number:
PCT/CN2019/108922
Publication Date:
April 01, 2021
Filing Date:
September 29, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11578; H01L27/1157
Foreign References:
CN110114880A | 2019-08-09 | |||
CN109417074A | 2019-03-01 | |||
US20160104719A1 | 2016-04-14 | |||
US10177160B2 | 2019-01-08 | |||
US20180366489A1 | 2018-12-20 | |||
JP2013229468A | 2013-11-07 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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