THREE-DIMENSIONAL MEMORY DEVICE HAVING EPITAXIALLY-GROWN SEMICONDUCTOR CHANNEL AND METHOD FOR FORMING THE SAME

Title:

THREE-DIMENSIONAL MEMORY DEVICE HAVING EPITAXIALLY-GROWN SEMICONDUCTOR CHANNEL AND METHOD FOR FORMING THE SAME

Document Type and Number:

WIPO Patent Application WO/2021/056520

Kind Code:

A1

Abstract:

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, and a memory string extending vertically through the memory stack. The memory string includes a single crystalline silicon plug in a lower portion of the memory string, a memory film above the single crystalline silicon plug and along a sidewall of the memory string, and a single crystalline silicon channel over the memory film and along the sidewall of the memory string.

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Inventors:

ZHU HONGBIN (CN)

Application Number:

PCT/CN2019/108922

Publication Date:

April 01, 2021

Filing Date:

September 29, 2019

Export Citation:

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Assignee:

YANGTZE MEMORY TECH CO LTD (CN)

International Classes:

H01L27/11578; H01L27/1157

Foreign References:

CN110114880A	2019-08-09
CN109417074A	2019-03-01
US20160104719A1	2016-04-14
US10177160B2	2019-01-08
US20180366489A1	2018-12-20
JP2013229468A	2013-11-07

Attorney, Agent or Firm:

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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