Title:
THREE-DIMENSIONAL MEMORY DEVICES HAVING HYDROGEN BLOCKING LAYER AND FABRICATION METHODS THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/068229
Kind Code:
A1
Abstract:
Three-dimensional (3D) memory devices (200) having a hydrogen blocking layer (246) and fabrication methods thereof are disclosed. A 3D memory device (200) includes a substrate (208), a memory stack (210) including interleaved conductive layers (212) and dielectric layers (214) above the substrate (208), an array of NAND memory strings (216) each extending vertically through the memory stack (210), a plurality of logic process-compatible devices above the array of NAND memory strings (216), a semiconductor layer (242) above and in contact with the logic progress-compatible devices, a pad-out interconnect layer (248) above the semiconductor layer (242), and a hydrogen blocking layer (246) vertically between the semiconductor layer (242) and the pad-out interconnect layer (248) and configured to block outgassing of hydrogen.
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Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2019/110752
Publication Date:
April 15, 2021
Filing Date:
October 12, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11529; H01L23/29
Foreign References:
| CN110291631A | 2019-09-27 | |||
| US20190229125A1 | 2019-07-25 | |||
| CN109564923A | 2019-04-02 | |||
| US20170207244A1 | 2017-07-20 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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