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Patent Searching and Data


Title:
TRANSISTOR, ELECTRONIC DEVICE AND TERMINAL APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/160240
Kind Code:
A1
Abstract:
Provided are a transistor, an electronic device and a terminal apparatus, which can improve the ESD capability of a transistor. The transistor comprises a channel, a source electrode, a drain electrode, a gate electrode, an isolation region, which is arranged on two sides of the channel, and a source field plate, which is located on one side of the gate electrode that faces away from the channel, wherein the source field plate is electrically connected to the source electrode, and the source field plate comprises a main field plate and a secondary field plate; the main field plate partially overlaps the gate electrode, one side part of the main field plate extends across the gate electrode and along the channel to the drain electrode; a first end of the main field plate enters the isolation region across the channel and in a direction perpendicular to the channel; and the secondary field plate is located at a junction between the channel and the isolation region, and extends in the direction from the main field plate to the source electrode along the channel.

Inventors:
LE LINGCONG (CN)
DAI SHUJUN (CN)
LI XIAOGANG (CN)
HU HUILAN (CN)
JIANG HAO (CN)
ZENG CHANG (CN)
Application Number:
PCT/CN2021/074384
Publication Date:
August 04, 2022
Filing Date:
January 29, 2021
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/778; H01L29/41
Foreign References:
CN112103337A2020-12-18
CN109904226A2019-06-18
CN109585543A2019-04-05
CN106486363A2017-03-08
CN111627988A2020-09-04
US20160079403A12016-03-17
US20160035870A12016-02-04
JP2020113625A2020-07-27
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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