Title:
TRENCH-TYPE FIELD-EFFECT TRANSISTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/068420
Kind Code:
A1
Abstract:
Provided in the present invention are a trench-type field-effect transistor structure and a preparation method therefor. The preparation method comprises: providing a substrate (100), and forming an epitaxial layer; forming a plurality of device trenches (102), forming a first shielding dielectric layer (106) and a first shielding gate layer (105) on the inner wall of the device trenches (102), the upper surface of the first shielding dielectric layer (106) being lower than the upper surface of the first shielding gate layer (105), and forming a second shielding dielectric layer (110) and a second shielding gate layer (109); forming a third shielding dielectric layer (111), and forming a gate dielectric layer (112) and a gate layer (113); forming a body region (114) and a source (115); and an upper metal structure (118) and a lower metal structure (119). On the basis of the provision of the first shielding gate layer (105) and the second shielding gate layer (109), the present invention can improve the doping concentration of a drift region (the epitaxial layer) and optimize the longitudinal electric field distribution on the surface of device trenches, which can solve the problems in the prior art in which the longitudinal electric field on the surface of trenches has a suspended distribution of two peak values when a device has broken down, and the electric field between the electric field peak values deteriorates severely, thereby further improving the contradictory relationship between device breakdown voltage and specific on-resistance.
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Inventors:
YAO XIN (CN)
YU QIANG (CN)
JIAO WEI (CN)
SANG YUGUO (CN)
YU QIANG (CN)
JIAO WEI (CN)
SANG YUGUO (CN)
Application Number:
PCT/CN2019/130503
Publication Date:
April 15, 2021
Filing Date:
December 31, 2019
Export Citation:
Assignee:
CHINA RESOURCES MICROELECTRONICS CHONGQING CO LTD (CN)
International Classes:
H01L29/06; H01L21/328
Foreign References:
| US20170288052A1 | 2017-10-05 | |||
| US20170288052A1 | 2017-10-05 | |||
| US20170288051A1 | 2017-10-05 | |||
| CN108389800A | 2018-08-10 | |||
| CN103887342A | 2014-06-25 | |||
| US20190103489A1 | 2019-04-04 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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