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Title:
TWO-DIMENSIONAL MATERIAL-BASED GATE, MEMORY UNIT, ARRAY, AND OPERATING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/114571
Kind Code:
A1
Abstract:
A two-dimensional material-based gate, a memory unit, an array, and an operating method thereof, the gate comprising: a stack unit. The stack unit is a metal-two-dimensional semiconductor-metal structure, comprising a two-dimensional semiconductor layer and metal layers respectively arranged on the upper and lower surfaces of the two-dimensional semiconductor layer. The number of stack units is N, N≥1, and in each stack unit, the two metal-two-dimensional semiconductor interfaces both form a Schottky contact, and when the two-dimensional material-based gate is powered on, the stack unit comprises two reverse series-connected Schottky diode structures. Or the number of stack units is M, M≥2, and in each stack unit, one of the two metal-two-dimensional semiconductor interfaces forms a Schottky contact and the other interface forms an ohmic contact, and when the two-dimensional material-based gate is powered on, the M stack units comprise M reverse parallel-connected Schottky diode structures.

Inventors:
LIN HUAI (CN)
XING GUOZHONG (CN)
LIU MING (CN)
Application Number:
PCT/CN2020/090618
Publication Date:
June 17, 2021
Filing Date:
May 15, 2020
Export Citation:
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Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
G11C11/16; H01L43/08
Foreign References:
CN105405860A2016-03-16
CN110676288A2020-01-10
CN105449099A2016-03-30
CN110660435A2020-01-07
US20190214429A12019-07-11
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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