WAFER SHAPE MEASUREMENT METHOD

WIPO Patent Application WO/2021/070531

A1

A wafer shape measurement method which involves using a flatness measurement instrument, which has a first optical system and a second optical system respectively positioned on the sides of both main surfaces of a wafer that has a first main surface and a second main surface and is inserted into the flatness measurement instrument, to measure the shape of the wafer while holding the periphery of the same, said method comprising: a first procedure for using only one optical system from among the first and second optical systems to measure the amounts of surface displacement of the first main surface and the second main surface of the wafer; a second procedure for using the amounts of surface displacement of the first main surface and the second main surface measured by the one optical system to calculate the amount of peripheral holding deformation caused by the holding of the periphery of the wafer; and a third procedure for calculating an original warp value for the wafer by subtracting the amount of peripheral holding deformation from a warp value output by the flatness measurement instrument. As a result, a wafer shape measurement method is provided that makes it possible to measure an original warp value for a wafer using a flatness measurement instrument and reduce the difference between warp values measured using different instruments.

OHNISHI MASATO (JP)

PCT/JP2020/033514

April 15, 2021

September 04, 2020

Click for automatic bibliography generation  

SHINETSU HANDOTAI KK (JP)

G01B11/30; G01B21/30; H01L21/66

JP2007064748A	2007-03-15
JP2008076269A	2008-04-03
JP2004020286A	2004-01-22
JPH11351857A	1999-12-24
US6275770B1	2001-08-14

YOSHIMIYA Mikio et al. (JP)

View/Download PDF      PDF Help

Previous Patent: BATTERY CASE FOR ELECTRIC VEHICLE AND METHOD FOR MANUFACTURING BATTERY CASE

Next Patent: SECONDARY BATTERY