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WO/2024/066218A9 |
A mask and a layout method therefor, and a typesetting pattern (500) of a chip. The mask comprises: a chip pattern region, which comprises a plurality of chip pattern groups (501) distributed at intervals in a first direction (a), wherei...
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WO/2024/110141A1 |
Disclosed are methods, systems, and computer software for generating a mask design. A method can include obtaining an initial OPC pattern contour resulting from an OPC process and determining a set of selected points on the initial OPC p...
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WO/2024/112062A1 |
This extreme ultraviolet lithography blankmask comprises a phase shift film, the phase shift film comprising at least one of Ru, Mo, Nb, Si, and Zr. The phase shift film has a low refractive index (n) and low extinction coefficient (k), ...
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WO/2024/102313A1 |
A reticle container includes an outer pod and an inner pod, the inner pod configured to contain a reticle. The outer pod includes a pod door including a purge port, and a pod dome including one or more channels configured to receive a pu...
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WO/2024/100090A1 |
A method for determining pattern density data for a pattern to be printed using a mask printing device is disclosed. Vector data describing the pattern to be printed are received and the vector data are rasterized to produce rasterized d...
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WO/2024/094385A1 |
Systems, methods, and computer software are disclosed for reducing wafer patterning errors caused by a mask device. One method (300) can include obtaining a first mask design (310) having a first portion (324) associated with an optimize...
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WO/2024/087254A1 |
A method and apparatus for quickly removing particles by using an organic thin film. The method comprises: S1, coating an organic solution on the surface of a material substrate containing particles to be removed, wherein the organic sol...
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WO/2024/090109A1 |
The present invention comprises: a light irradiation unit 2 that irradiates a light-transmissive and film-like test object W with inspection light L1; a scattered light detection unit 3 for detecting scattered light L2 which is produced ...
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WO/2024/085026A1 |
Provided is a reflective mask blank which can reduce the diffusion of boron (B), contained in an absorber film, into an etching mask film. This reflective mask blank contains a substrate, a multilayer reflective film, an absorber film ...
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WO/2024/084796A1 |
Provided are a light source device and a raw material supply unit which can inhibit the impact of debris. This light source device uses energy beam (EB) irradiation to convert a liquid raw material (23) into plasma and extract radiatio...
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WO/2024/086543A1 |
A method of evaluating the microstructure of a surface, such as a coating on a substrate. The surface is illuminated using at least one light source. One or more images of the illuminated surface are captured. The captured images are pro...
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WO/2024/085089A1 |
Provided is a reflection-type mask blank having excellent strength of a surface on the reverse surface side on which a conductive film is disposed. This reflection-type mask blank comprises: a substrate; a conductive film disposed on o...
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WO/2024/080446A1 |
The disclosed pellicle manufacturing method of the present invention comprises: a silicon nitride layer formation step of forming a silicon nitride layer on each of the two sides of a wafer substrate; a nickel layer formation step of for...
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WO/2024/076221A1 |
The present invention pertains to a manufacturing method of a graphene membrane pellicle for an extreme ultra violet (EUV) lithographic apparatus. The present invention provides a manufacturing method of a graphene membrane pellicle for ...
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WO/2024/066218A1 |
A mask and a layout method therefor, and a typesetting pattern (500) of a chip. The mask comprises: a chip pattern region, which comprises a plurality of chip pattern groups (501) distributed at intervals in a first direction (a), wherei...
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WO/2024/065153A1 |
Provided in the embodiments of the present disclosure are a mask, an array substrate and a manufacturing method therefor, and a display device. The array substrate comprises a base, and a via provided on one side of the base, wherein the...
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WO/2024/073091A1 |
An apparatus includes an inner container having a baseplate and a cover, an outer container having a pod dome and a pod door, and a first set of pins and a second set of pins disposed on the pod door. The pod door has a locked state and ...
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WO/2024/071026A1 |
Provided is a substrate with a conductive film which can inhibit changes in flatness in a reflective mask and a reflective mask blank for EUV lithography having a conductive film. This substrate with a conductive film includes a substr...
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WO/2024/061952A1 |
In a method for operating a projection exposure system (10) for microlithography, a mask (40) is repeatedly exposed with an exposure radiation (14) provided by an illumination system (20), and mask structures (42) are imaged on, in each ...
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WO/2024/064194A1 |
A spacer for parts of a reticle pod includes spacer contacts configured to contact alignment features of a cover and a baseplate of the reticle pod such that the cover and baseplate are separated by a gap. The spacer includes a frame con...
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WO/2024/056548A1 |
A pellicle for use in a lithographic apparatus, the pellicle include: a membrane, the membrane having a first portion and a second portion; and a protective portion at the second portion on at least one side of the membrane. A method for...
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WO/2024/058243A1 |
The present invention provides a manufacturing method for a conductive film having high accuracy in detecting a defect. The manufacturing method includes an examination step for irradiating a conductive film with a laser beam to examine ...
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WO/2024/057500A1 |
Provided is an EUV-transmissive film in which EUV absorption by a protective layer causing a decrease in EUV transmittance can be suppressed, thereby enabling exhibition of high EUV transmittance at the time of exposure. The EUV-transmis...
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WO/2024/057499A1 |
Provided is an EUV transmissive film from which particles are unlikely to be generated even when the film is damaged by any chance. This EUV transmissive film is provided with: a main layer that is formed of metallic beryllium and that h...
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WO/2024/053634A1 |
This reflective mask blank comprises a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of the EUV light in this...
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WO/2024/048387A1 |
The purpose of the present invention is to provide a reflection-type mask blank that prevents electrostatic damage from occurring, while suppressing CD changes during a dry etching process. A reflection-type mask blank 100 comprises a ...
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WO/2024/045984A1 |
A color filter substrate (10), a display panel (100), and a mask (200). The color filter substrate comprises a display area located in the middle and a non-display area located on the periphery of the display area, and comprises a substr...
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WO/2024/046107A1 |
The present invention relates to Zn-based organically-coordinated nanoparticles, a photoresist composition, a preparation method therefor, and the use thereof. The nanoparticles have a metal-organic one-dimensional repeatedly-arranged ch...
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WO/2024/045204A1 |
A method and apparatus for locating a production monitoring point of a photomask, and an electronic device. The method for locating a production monitoring point of a photomask comprises: determining coordinates of one or more target det...
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WO/2024/048365A1 |
A foreign matter removal device according to the present disclosure comprises: a vacuum ultraviolet light generation unit that generates vacuum ultraviolet light; an irradiation container for irradiating a pellicle film with the vacuum u...
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WO/2024/044091A1 |
A glass comprising titania and silica is disclosed. A plot of average hydroxyl concentration of each segment of a plurality of segments vs. distance along the glass is provided by: y = Ax2 + Bx + C, wherein A (in ppm/mm2) is in a range f...
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WO/2024/037837A1 |
Described a method and system for generating a mask pattern design for use in imaging of a pattern on a substrate using a lithographic apparatus. The methods include identifying an area located between two adjacent exposure fields in a l...
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WO/2024/039587A1 |
Reticle containers include a cover and a baseplate having contact surfaces configured to contact one another when the reticle container is assembled. Relief areas are provided adjacent to at least one of the contact surfaces. The relief ...
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WO/2024/039574A1 |
A system for mask design repair may develop a simulation-based model of a layer thickness after one or more process steps for fabricating features on a sample, develop a transformed model of the fabrication process that emulates the simu...
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WO/2024/034439A1 |
Provided is a reflective mask blank for EUV lithography in which a multilayer reflective film that reflects EUV light and an absorption film that absorbs EUV light are laminated on a substrate in the stated order from the substrate side,...
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WO/2024/028468A2 |
Method of characterizing a fault in a scanning electron microscope (100), wherein the scanning electron microscope (100) is suitable for analysing and/or processing a sample (10), especially a lithography mask, with the aid of an electro...
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WO/2024/029410A1 |
Provided are a reflective mask for EUV lithography that can form transfer patterns with high dimensional accuracy in fine hole-like patterns, and a reflective mask blank used for said reflective mask. A reflective mask blank 10 for EUV l...
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WO/2024/029409A1 |
Provided are: a reflective mask for EUV lithography that can form a transfer pattern having high dimensional accuracy with respect to a fine line-shaped pattern; and a reflective mask blank used for the reflective mask. A reflective mask...
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WO/2024/027999A1 |
A reflective member for use in an EUV lithographic apparatus, the reflective member comprising a multilayer stack which comprises a plurality of layers arranged in pairs, wherein: each pair comprises a first layer and a second layer; the...
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WO/2024/023165A1 |
A method for checking a lithography mask (100) for a repair of the lithography mask (100), the lithography mask (100) having a plurality of edges (110) between partial regions of the lithography mask (100) and the object of the repair ly...
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WO/2024/022854A1 |
Described herein are methods and systems for training a prediction model to predict a mask image in which mask rule check (MRC) violations or process violations (e.g., edge placement error, sub-resolution assist feature (SRAF) printing) ...
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WO/2024/022729A1 |
A system for removing particles from a surface includes a plurality of ultrasonic transducers, arranged in an array, a control system, in communication with the plurality of ultrasonic transducers, the control system configured to contro...
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WO/2024/024513A1 |
Provided is a reflection-type mask blank comprising a substrate, a multi-layer reflective film that reflects EUV light, a protective film that protects the multi-layer reflective film, and an absorption film that absorbs the EUV light, i...
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WO/2024/017808A1 |
A method of determining a mask design is described. The method comprises generating a continuous multimodal representation of a probability distribution of a target design in at least a portion of a latent space. The latent space compris...
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WO/2024/012128A1 |
A mask assembly (10), a photolithographic device, and a photolithographic method. By means of a double exposure process, a process window is improved. The mask assembly (10) comprises a first mask (11) and a second mask (12). The first m...
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WO/2024/014207A1 |
The present invention addresses the problem of providing a reflection-type mask blank for which machining error is small when machining by charged particle radiation is carried out. A reflection-type mask blank (10a) includes, in the g...
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WO/2024/013273A1 |
Described herein are methods and systems for determining mask rule check (MRC) violations associated with mask features based on local feature dimension (LFD) of mask features. A detector is placed at a first location of a mask feature a...
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WO/2024/009809A1 |
This reflective mask blank has, in the following order, a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of th...
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WO/2024/010238A1 |
A photomask according to an embodiment comprises: a substrate; and a plurality of patterns disposed on the substrate, wherein the patterns comprise a first layer and a second layer having different electrical conductivities, and have an ...
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WO/2024/009819A1 |
This reflective mask blank comprises, in the stated order, a substrate, a multi-layered reflective film that reflects EUV light, a protective film that protects the multi-layered reflective film, and a phase shift film that shifts the ph...
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