Devices or Arrangements, The Optical Operation of Which Is Modified By Changing The Optical Properties of The Medium of The Devices or Arrangements for The Control of The Intensity, Colour, Phase, Polarisation or Direction of Light, e.g. Switching, Gating, Modulating or Demodulating, Techniques or Procedures for The Operation Thereof, Frequency-Changing, Nonlinear Optics, Optical Logic Elements, Optical Analogue/Digital Converters

Matches 801 - 850 out of 2,262	< 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 >

Document	Document Title
JP3145941B2	OPTICALLY FUNCTIONAL AMPLIFYING ELEMENT AND ITS OPERATING METHOD To provide the optically functional amplifying element and its operating method which actualize an optical gate that operates at a high repetitive speed above 100GHz. On one end side of a semiconductor laser amplifier 1, a saturable abso...
JP3141080B2	FUNCTIONAL SEMICONDUCTOR DEVICE PURPOSE: To enable such a functional operation as bistable operation, by laminating in order a first, a third, and a fifth semiconductor layers of a first conductivity type and a second and a fourth intrinsic semiconductor layers, and ca...
JP2001052175A	IMAGE RETRIEVING DEVICE To provide an image retrieving device for retrieving an image similar to an object image out of a reference image data base storing plural pieces of reference image data. This image retrieving device is provided with a feature vector ext...
JP2001033842A	PRODUCTION OF OPTICAL OPERATIONAL ELEMENT USING LIQUID CRYSTAL PHOTODIODE To enhance the asymmetry in a liquid crystal electro-optic device and to obtain a device which can be regarded as a liquid crystal photodiode by curing (polymerizing) a curing type liquid crystal monomer by irradiation of UV rays under a...
JP3130329B2	[Title of Invention] Optical pattern recognition element PURPOSE:To miniaturize an optical pattern recognition device by forming a three-dimensional waveguide optical system by arranging flat optical elements consisting of a diffraction grating, a Fourier transformation lens, a mirror, and a l...
JP2001021933A	SIGNAL PROCESSOR To provide a signal processor which has an optical input signal and an optical output signal, constituting an optical logical element and also is capable of obtaining an optical output signal in accordance with an optical input signal wi...
JP3126463B2	DYNAMIC THREE-DIMENSIONAL OPTICAL CONNECTING METHOD AND OPTICAL CONNECTION ELEMENT PURPOSE: To form a three-dimensional waveguide, to utilize it not only for optical connection but also for arithmetic operation and to make an optical neuro computer practicable. CONSTITUTION: By using a substance whose refractive index ...
JP3125332B2	QUANTUM DOT TUNNEL ELEMENT AND METHOD AND DEVICE FOR INFORMATION PROCESSING USING THIS ELEMENT PURPOSE: To provide a new mesoscopic electronics element having epoch-making information processing speed and information precision. CONSTITUTION: Quantum dots QD1 to QDi+9 where electrons (e) are spatially shut up are so formed that tun...
JP2000356765A	METHOD OF DRIVING LIQUID CRYSTAL DISPLAY DEVICE To obtain a liquid crystal display device high in definition, high in quality and capable of being driven by a simple matrix driving method by switching the state among a plurality of metastable states which can be selected as required a...
JP3115589B2	[Title of Invention] Neural network PCT No. PCT/GB90/01782 Sec. 371 Date Jun. 11, 1992 Sec. 102(e) Date Jun. 11, 1992 PCT Filed Nov. 20, 1990 PCT Pub. No. WO91/07714 PCT Pub. Date May 30, 1991.A neural network has inputs formed by square array of optical modulators Mij and...
JP3111541B2	OPTICAL CONNECTION DEVICE PURPOSE: To provide an optical connection device which can easily secure the non-reversible connection between the optical elements by providing these elements having the different optical paths by polarization, an optical system. CONSTI...
JP3112800B2	[Title of Invention] Optical Arithmetic Logic Unit A optical processor facilitates the alignment between an original image and transformation patterns, thus improving the operation accuracy, and, if a fixed transmission mask is to be used, facilitates the fabrication of the fixed transmi...
JP2000314904A	OPTICAL LOGIC ELEMENT, OPTICAL LOGIC CIRCUIT AND OPTICAL OSCILLATION CIRCUIT To obtain an optical logic element having a simple constitution formed at a low cost. This optical logic element is composed of a dielectric block 1 which is arranged so that driving light Ld is made incident on a surface 1a at the whole...
JP3099203B2	[Title of Invention] Optical pattern recognition classification device PURPOSE:To provide the optical pattern recognition and classification device which can secure position steadiness with an extremely small number of input units. CONSTITUTION:The optical pattern recognition and classification device consi...
JP3096819B2	[Title of Invention] Natural Network
JP3096717B2	[Title of Invention] Natural Network
JP2000275693A	OPTICALLY FUNCTIONAL DEVICE To obtain a new optically functional device which has effects to invert and to amplify optical signals in an optical communication wavelength band, which operates video optical signals and which can operate even over a wide temp. range b...
JP3094070B2	[Title of Invention] Optical pattern recognition classification device PURPOSE:To surely perform recognition classification by performing re-learning when unmatch is obtained by comparing the output of a means which performs the recognition of a pattern to be inspected by collating with a closed area to whi...
JP3086927B2	INDUSTRIAL APPLICABILITY: Small optical pattern recognition device and its drive system
JP3085311B2	[Title of Invention] FIFO buffer A FIFO buffer in which respective portions are controlled in a distributed manner is provided. In the FIFO buffer, a number of loop circuits (M1,M2,M3,M4) having delay elements are provided in which respective loop circuits are connected...
JP2000510970A	[Title of Invention] Optical switching device A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capp...
JP2000223763A	OPTICAL ELEMENT To permit the logic operation of optical signals and perform a required optical signal amplifying action for multiple connections by providing parts for inverting the signals and for light generating and amplifying actions. The inversion...
JP3071630B2	[Title of Invention] Semiconductor Optical Functional Element An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provid...
JP3072001B2	[Title of Invention] Nonlinear Optical Transistor A nonlinear optical transistor comprises a pair of surface emitting semiconductor laser diodes, a phase modulator including a waveguide confined by a pair of first mirrors in the horizontal direction and located between the pair of surfa...
JP3066457B2	[Title of Invention] Optical pattern recognition device
JP3059546B2	[Title of Invention] Optical storage device and optical logic device
JP2000162658A	OPTICAL LOGIC CIRCUIT To obtain an optical NOT logic circuit which facilitates size reduction and integration by using a symmetrical Mach-Zehnder type optical waveguide circuit as a logical operation circuit.Light projected by a laser diode 23, which is drive...
JP3051519B2	[Title of Invention] Light emitting device A novel light emitting semiconductor device is disclosed. The device utilizes real space transfer (RST) of carriers, and comprises regions (43,45) of opposite effective conductivity type separated by a barrier layer (44). The first regio...
JP2000505961A	[Title of Invention] Rapid Heat Treatment Pot A furnace (1) for Rapid Thermal Processing of a wafer (7), characterized in that the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the...
JP2000137007A	STATE CONSTITUTING METHOD AND DEVICE, AND COMMUNICATING METHOD AND DEVICE USING SAME To constitute a desirable quantum-mechanical state. A quantum-mechanical state comprising plural numbers of two level systems (X1, X2,..., X2n+1) is expressed by superposition of orthonormal bases where the respective level systems come ...
JP2000131726A	PARALLEL SHIFT OPTICAL MODULATION ELEMENT To shift the picture written in pixels in a single action over the entire pixels by changing the state of an optical material so as to shift the states of the pixels. Relating to one of transparent insulating substrates 3, optical sensor...
JP3037833B2	MULTI-TERMINAL OPTICAL DELAY COMPENSATING CIRCUIT PURPOSE: To obtain an optical switch which exerts no influence of jitters on a high-speed light signal and also stably operates by removing the propagation time difference of a light signal passing through a multi-terminal optical switch...
JP2000122013A	OPTICAL DEVICE FOR PROCESSING INPUT SERIES SEQUENCE OF N BIT SUBJECTED TO PHASE MODULATION AND METHOD FOR OPTICALLY COMPARING OPTICAL SERIES SEQUENCE OF N BIT SUBJECTED TO PHASE MODULATION WITH SEQUENCE OF PRESCRIBED N BIT To provide an optical asynchronous type device for processing optical series sequence of N bit in order to compare the optical series sequence of N bit with target sequence.This device has a) an input means 64 of the input optical series...
JP2000505209A	INDUSTRIAL APPLICABILITY The apparatus having an optical logic and an optical switch function Intrapulse Raman scattering is utilized in providing optical devices that can be adapted to perform various logic and switching functions. In a logic gate embodiment of the present invention, a plurality of pulses of the same central wav...
JP3033659B2	OPTICAL CONNECTOR FOR PLANAR OPTICAL FUNCTION ELEMENT PURPOSE: To provide a small-sized optical connector for planar optical function element which has a high optical use efficiency. CONSTITUTION: This device consists of reflection mirrors 13 to 15, quarter-wave plates 16 to 18, polarizatio...
JP3034764B2	OPTICAL COMMUNICATION EQUIPMENT PURPOSE: To obtain a self-routing optical signal switching node and a communication system by using a Sagnac optical fiber logic gate. CONSTITUTION: A Sagnac gate 168 in a memory loop 167 allows a new routing bit to be loaded in the loop...
JP3031390B2	NONLINEAR OPTICAL DEVICE PURPOSE: To provide optical switching operation with lower power by using secondary nonlinear optical effect twice. CONSTITUTION: This nonlinear optical device consists of a multiplexer 1 which functions to multiplex light beams of angul...
JP2000098437A	LIGHT SWITCHING GATE AND ITS SYSTEM To provide an EAND gate-switch-matrix being compact, inexpensive, and high performance.Plural input ports 22 and plural output ports 24 are connected with erbium added waveguides 11 through splitters 16. Each input port 22 is connected t...
JP3028511B2	[Title of Invention] Direction determination device
JP3023694B2	PROBLEM TO BE SOLVED: To recognize an optical pattern for a multireference image. An optical pattern recognition method which can be applied to a joint transform correlator operative to effect correlation processing between a plurality of reference images and at least a single object image to produce correlation peaks...
JP3022730B2	OPTICAL STRUCTURAL BODY PURPOSE: To provide a nonreciprocal optical structural body for realizing an optical current rectifier, optical isolator, etc., which make possible the super high integration required in optical electronics technology intended for ultra-...
JP3020680B2	PATTERN RECOGNITION CLASSIFYING METHOD PURPOSE: To shorten the preparating time of a reference pattern by taking the relative output values of all kinds of combination that is the candidate Of the reference pattern, setting a pattern of combination with the lowest relative ou...
JP3020687B2	METHOD FOR DETECTING LIGHT DATA PULSE TRAIN PURPOSE: To provide the light data pulse train detecting method which can detect an ultrahigh speed light data pulse train in real time without being limited by an electric response speed. CONSTITUTION: Reference light pulses 1 and the l...
JP3016302B2	INDUSTRIAL APPLICABILITY: pnpn semiconductor element and its drive circuit The invention provides an optical functioning device which emits and receives light and a driver circuit for controlling the device with light. In the device, elements in which semiconductor multilayer-film reflecting mirrors are provide...
JP2000066255A	OPTICAL INVERTER BASED ON SATURABLE ABSORBER To provide an optical inverter which is simple and has practical effectiveness. A low-power laser 18 is divided into a first beam propagating in a first beam path 24 and a second beam propagating in a second beam path 26. A saturable abs...
JP3010392B2	INDUSTRIAL APPLICABILITY: Spatial light modulator and its driving method The object is to directly produce an edge enhanced or edge extracted image, without using a specific device structure, by an optically writable spatial light modulator of the ferroelectric liquid crystal type which is applied to an image...
JP3009562B2	[Title of Invention] Optical switching device A light transmission circuit 20 is biased to one optical bistable region of its multistable characteristic by a bias light from a light source 29. The bias light is superimposed by plural control pulse lights, and the superimposed light ...
JP2991959B2	[Title of Invention] Optical Ratio Amplifier 1. A first and second input electron absorption modulators connected in series to receive an optical input beam, respectively. The first and second output electronic modulators, respectively, connected in series to generate an optical output beam, Having an electrical amplifier that electrically connects a first node located between the first and second input modulators to a second node located between the first and second output modulators. A featured optical power ratio amplifier. 2. The optical power ratio amplification device according to claim 1, wherein the electron absorption modulator is a self-linear modulator that generates one electron of a photocurrent of each absorbed photon. 3. The optical power ratio amplification device according to claim 1, wherein the electron absorption modulator is a multiple quantum well diode. 4. The optical power ratio amplification device according to claim 1, further comprising a voltage source coupled to the first input electron absorption modulator and the first output electron absorption modulator. 5. The optical power ratio amplification device according to claim 1, wherein the voltage amplifier is a single gain amplifier. 6. The optical power ratio amplification device according to claim 1, further comprising first and second light supply beams incident on the first and second output electron absorption modulators, respectively. 7. The first and second light supply beams are characterized in that they are larger than the power of the first and second light input beams incident on the first and second input electron absorption modulators, respectively. The optical power ratio amplification device according to claim 6. [Technical field to which the invention belongs] The present invention relates to an amplifier that amplifies the optical power ratio. Optical information processing requires the ability to perform analog operations such as light beam correlation, rotation, and difference. These operations result in positive and negative values. Since the intensity of the light beam is always positive, positive and negative values are sometimes expressed as the difference in power between the two light beams. Various methods are known as methods for processing a pair of light beams having analog values determined by such a difference in power. An example of such a method is disclosed on pages 678-698 of IEEE J. Quantum Electron., Vol.29, Number 2, m February 1993. One limitation of such a method is that the light beam of the optical system is inevitably weakened, so that the analog value represented by the difference in the power of the light beam is also weakened. [Means for solving problems] According to the present invention, the analog value is expressed as a ratio of optical power rather than as a difference in optical power. Since the power ratio is equal and has no effect of attenuation that affects the light beam, it is more advantageous to express it as a ratio of light power rather than as a difference in light power. Each optical power ratio amplifier has first and second electron absorption modulators connected in series to receive the optical input beam. The first and second output electron absorption modulators are each connected in series to generate an optical output beam. The voltage amplifier electrically connects the first node between the first and second input modulators to the second node between the first and second output modulators. In operation, the power ratio of the output beam is a function of the power ratio of the input beam. In one embodiment of the invention, the electron absorption modulator is, for example, a self-linearized modulator for producing one electron in the photocurrent of each absorbed photon. It is a multiple quantum well diode like. Further, the voltage amplifier is a voltage amplifier, which is a single gain amplifier. BEST MODE FOR CARRYING OUT THE INVENTION FIG. 1 shows an embodiment of the optical ratio amplifier 20 of the present invention. Bipolar input signal is optical beam P I1 And P I2 The analog value is represented by the power ratio P. I1 PI2 be equivalent to. Power ratio P greater than 1 I1 / P I2 Indicates, for example, a positive value and has a power ratio P less than 1. I1 / P I2 Indicates a negative value. Since the power ratio is not affected by the attenuation affected by both of the equal amounts of light beams, it is preferable to express the analog value as the ratio of light power rather than the difference in light power. The optical ratio amplifier 20 has first and second electron absorption modulators 2 and 4 connected in series, and an output electron absorption modulator similarly connected in series. Each electron absorption transformer generates a photocurrent proportional to the power of the light beam incident on it. The voltage amplifier 10 connects the first node 11 located between the first and second input modulators 2 and 4 to the second node 13 located between the first and second output modulators 6 and 8. .. During this operation, the electron absorption modulator is reverse biased. In the embodiment of the present invention shown in FIG. 1, the common voltage power supply is connected to the electron absorption modulators 2 and 6, and the electron absorption modulators 4 and 8 are grounded. Optical input beam P during operation I1 , P I2 Is incident on input modulators 2 and 4, and the light supply beam P S1 And P S2 Is incident on the output modulators 6 and 8. As described below, the output modulators 6 and 8 have an optical output beam P. o1 , P o2 Responds to the input beam by generating. The ratio is the input power ratio P I1 / P I2 Is just a function of. To understand this relationship between the input and output beams, the operating voltage V1 across the input modulator is the input power ratio P. I1 / P I2 It should be noted that This latter relationship can be understood by reviewing certain characteristics of electron absorption modulators well known to those of skill in the art. As described above, the electron absorption modulator applies a reverse bias to generate a photocurrent in response to a light beam incident on it. The generated photocurrent is proportional to the power of the light beam absorbed by the modulator. In certain cases, instead of the voltage range, wavelength and incident power, almost one photocurrent is generated for each absorbed photon. The amount of power absorbed by the modulator is determined by the magnitude of the voltage used (at least in a constant voltage and wavelength range). Therefore, for a given incident light power, the photo current increases as the applied voltage increases. Such a function is shown in FIG. 2, and FIG. 2 shows the current-voltage relationship of the electron absorption modulator. Curves 20 and 22 show not only the relationship of difference but also the fixed value of the incident light power. Curves 20 and 22 are scaled diagrams, respectively, because some of the absorbed incident power is largely independent of the incident power at a given voltage and wavelength. Based on the characteristics of the electron absorption modulator described above, the voltage V Can be determined by conventional load line analysis. In FIG. 3, the solid line curves 30 and 32 are the voltage V. The load line showing the current-voltage correlation of the input modulator 4 is shown. The current-voltage correlation is determined by the above-mentioned modulator characteristics, and curves 30 and 32 are similar to those shown in FIG. In FIG. 3, the dotted line is the input beam P incident on the input modulator 2. I1 The load line of the input modulator 2 for is shown. Operating voltage V across input modulator 4 for a given incident beam power Is determined by the intersection of the current-voltage curve of the incident power and the load line. For example, in FIG. 3, different input beams P incident on the input modulator 4 I2 Operating voltage V corresponding to It shows two different values of. In particular, when the incident power changes from a low value (curve 30) to a high value (curve 32), the operating voltage V Is V 1b From V 1a Decreases to. V And input power ratio P I1 / P I2 Dependency between and is P I1 / P I2 So that P does not change I1 And P I2 It is shown in Figure 3 that the dotted load line and the current-voltage curve move up by the same amount only if both of them change due to the same factor. As a result, even the input beam P I1 And P I2 Operating voltage V even if it changes Is given P I1 / P I Does not change the ratio of. That is, V Is the input power ratio P I1 / P I2 Determined by the individual input beam P I1 And P I2 It is not determined by the value of. Voltage V o o Is applied to the output of the amplifier 10 and the voltage V applied to the output modulator 8 o o Is the operating voltage V Is proportional to. Thus, V Is the input power ratio P I1 / P I2 The voltage across the output modulator 8 is also determined by the input power ratio P I1 / P I2 Determined by. Part of the power absorbed by the electron absorption modulator as described above increases as the applied voltage increases. Voltage V o o Is applied to the output modulator 8, so V o o Is the supply beam P absorbed by the output modulator 8 S2 Determined part of, thus V o o Is the output beam P o1 Determine the value of. In addition, the voltage V o o Determines the voltage across the output modulator and therefore the feed beam P absorbed by the output modulator 6 S1 Determine part of, in other words, V o o Is the output P o o Determine the value of. Supply power ratio P S1 / P S2 Is a fixed value and the output power ratio P o1 / P o2 Is a function of voltage V. Finally, V o o Is V In proportion to V In turn P I1 / P I2 Since it is determined by, the output power ratio P o1 / P o2 Is the input power P I1 / P I2 It is a function of only the ratio of. That is, the device of FIG. 1 has a ratio of P. I1 / P I2 Ratio P determined by the value of the input signal represented by o1 / P o2 Provides the output signal represented by. Further, the device of FIG. 1 is an input P forming an input signal. I1 And P I2 Power supply power P with more power S1 And P S2 Functions as a more desirable amplifier by using. In this way, the relatively weak input beam P I1 And P I2 Is a very powerful output beam P o1 And P o2 To control. The present invention can be used with any electron absorption modulator such as a multiple quantum well diode in which the absorbed power increases with the applied voltage. One example of a modulator that can be used is a self-linear modulator, which produces one electron in the photocurrent of all photons absorbed from the incident light power beam. Self-linearization modulators are cited and described in DABMiller et al. IEEE Journal of QuantumElectronic, Vol.QE-21, Numer 9, September 1985, page 1462-1476. While the electron absorption modulator shown in FIG. 1 transmits light, other modulators used as modulators have a reflective surface that reflects the light back to the modulator. In the present invention, any type of voltage modulator can be used, if desired. In one embodiment of the invention, the voltage amplifier is a voltage V at the amplifier output. Is the operating voltage V A single gain amplifier is used so that they are equal to each other. FIG. 4 shows an example of a single gain amplifier. This amplifier uses depletion mode field effect transistors (FETS) 40 and 42 arranged in a source-following configuration. Depletion mode FETS operates at near zero gate source voltage. This arrangement provides a substantially single voltage gain between the amplifier inputs and outputs. Other single gain amplifiers include amplifiers formed by operating amplifiers and are well known to those of skill in the art. It is desirable that the voltage amplifier requires only a low current at that input and is able to carry a larger current at that output while maintaining a substantially fixed voltage increase between the input and output. The optical proportional amplifier of the present invention is formed as a discrete component, that is, a single configuration monocilically integrated on a semiconductor wafer. Enhancement FETS using monosilic integration can be achieved by using conventional GaAs fabrication techniques as described in SMSze, Physics of Semiconductor Devices, Wiley, New York, 2nd ed. 1981, p.332. Monocylic integration using depletion mode FETs, quantum well modulators, and photodetectors is disclosed, for example, in LAD'Asaro et al. IEEE Jounal of Quantum Electronics, methodo Vol.29, Number2, February 1993, pages 670-677. Can be achieved in the same way. The above embodiments merely illustrate the principles of the invention, that various modifications by those skilled in the art can be made without departing from the spirit of the invention, and the invention is limited to the claims. Please note that. One such variant involves replacing a plurality of electron absorption modulators, respectively, of the input electron absorption modulators 2 and 4, which are coupled in series. Other variants include replacing input modulators 2 and 4 with modulator circuits for spatial differentiation, convolution, and correlation. Examples of such circuits are disclosed in IEEE J. Quantum Electoron., Vol.29, Number2, February 1993, pages 678-698. Although these circuits in the present invention are not truly derived from a mathematical point of view, they can perform other useful functions such as detection of edges, bumps and other features. [Effect of the invention] As a result of this behavior, the object is perceived regardless of changes in brightness, as it depends on the ratio of local (light) intensity rather than the local brightness of the image. obtain. [Simple explanation of drawings] [Figure 1] An embodiment of the optical ratio amplifier according to the present invention is shown. [Figure 2] The current-voltage correlation of the electron absorption modulator is shown. [Fig. 3] The load diagram of the circuit of FIG. 1 is shown. [Fig. 4] An example of a well-known single gain amplifier used in the present invention is shown. [Explanation of symbols] 2, 4 input modulator 6, 8 output modulator 11 1st node 13 Second node 20 optical ratio amplifier 40, 42 Depletion Mode Field Effect Transistors (FETS) Apparatus for amplifying an optical power ratio (Pi1/i2) includes first (2) and second (4) input electro-absorption modulators coupled together in series, each receiving an optical input beam (Pi1, Pi2). First and second output electro-a...
JPH11514759A	[Title of Invention] Optical Switching Device A description is given of a switching device (1) comprising a transparent substrate (3), a switching film (5) including hydrides of gadolinium or other trivalent metal, and magnesium, covered with a palladium layer (7). By exchange of hy...
JP2989894B2	[Title of Invention] Optical Switch PCT No. PCT/GB91/02091 Sec. 371 Date Jul. 26, 1993 Sec. 102(e) Date Jul. 26, 1993 PCT Filed Nov. 27, 1991 PCT Pub. No. WO92/09916 PCT Pub. Date Jun. 11, 1992.An optical switch comprises an optical fibre Sagnac loop interferometer having ...

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