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Title:
【発明の名称】炭化シリコン(SiC)トランジスタ
Document Type and Number:
Japanese Patent JP2002502127
Kind Code:
A
Inventors:
Bakowski, Meitec
Gustavson, wolf
Application Number:
JP2000529756A
Publication Date:
January 22, 2002
Filing Date:
February 02, 1999
Export Citation:
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Assignee:
AB Research Limited
International Classes:
H01L29/16; H01L29/12; H01L29/739; H01L29/78; (IPC1-7): H01L29/78; H01L29/16
Domestic Patent References:
JPH01211978A1989-08-25
JPH05235363A1993-09-10
JPH07170797A1995-07-04
JP2000511353A2000-08-29
JP2000514604A2000-10-31
JPH01211978A1989-08-25
JPH05235363A1993-09-10
JPH07170797A1995-07-04
JP2000511353A2000-08-29
JP2000514604A2000-10-31
Foreign References:
WO1997044828A11997-11-27
WO1998002916A11998-01-22
WO1997044828A11997-11-27
WO1998002916A11998-01-22
Other References:
JPN6009039504, Ａ．　Ｋ．　Ａｙａｒｗａｌ，　ｅｔ．ａｌ．, "‘‘Ａ　Ｃｒｉｔｉｃａｌ　Ｌｏｏｋ　ａｔ　ｔｈｅ　Ｐｅｒｆｏｒｍａｎｃｅ　Ａｄｖａｎｔａｇｅｓ　ａｎｄ　Ｌｉｍｉｔａｔｉｏｎｓ　ｏｆ　４Ｈ−ＳｉＣ　Ｐｏｗｅｒ　ＵＭＯＳＦＥＴ　Ｓｔｒｕｃｔｕｒｅｓ’’", Ｉｎｔｅｒｎａｔｉｏｎａｌ　Ｓｙｍｐｏｓｉｕｍ　ｏｎ　Ｐｏｗｅｒ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ　Ｄｅｖｉｃｅｓ　ａｎｄ　ＩＣｓ，　１９９６．　ＩＳＰＳＤ　’９６　Ｐｒｏｃｅｅｄｉｎｇｓ．，　８ｔｈ, 1996, ｐ．１１９−１２２, US, ＩＥＥＥ
Attorney, Agent or Firm:
Yoshitaka Sonoda (1 outside)



 
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