Title:
ソース領域および/またはドレイン領域に充填領域を有するトランジスタ
Document Type and Number:
Japanese Patent JP2006508529
Kind Code:
A
Abstract:
A transistor contains a source region and a drain region. Two or more fill areas are formed such that the fill areas and the source and/or drain region engage in one another. The fill areas have vertical dimensions which are at least of equal size to the vertical dimensions of the source and/or of the drain region. The fill areas and the source and/or drain region extend at least partially over a common vertical section. The fill areas are formed from an oxide and/or a nitride.
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Inventors:
Esmarck, Kai
Reese, Philip
Schaffbauer, Thomas
Strible, Martin
Wendell, Martin
Reese, Philip
Schaffbauer, Thomas
Strible, Martin
Wendell, Martin
Application Number:
JP2004554230A
Publication Date:
March 09, 2006
Filing Date:
November 26, 2003
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L29/78; H01L29/06; H01L29/08
Attorney, Agent or Firm:
Kenzo Hara International Patent Office