極度に硬いダイヤモンド及びその製法 - Carnegie Institution of Washington

Title:

極度に硬いダイヤモンド及びその製法

Document Type and Number:

Japanese Patent JP2007531680

Kind Code:

A

Abstract:

A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.

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Inventors:

Hemley, Russell, Jay.
Mou, Hkwan
Yang, Ji-Siu

Application Number:

JP2006520304A

Publication Date:

November 08, 2007

Filing Date:

July 14, 2004

Export Citation:

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Assignee:

Carnegie Institution of Washington

International Classes:

C30B29/04; C01B31/06; C23C16/27; C30B7/00; C30B21/02; C30B23/00; C30B25/00; C30B25/10; C30B28/06; C30B28/12; C30B28/14; C30B33/00; C30B33/02; G11B27/034; G11B27/036; G11B27/10; G11B27/11; G11B27/34; H04N5/76; H04N5/765; H04N5/775; H04N5/781; H04N9/804; H04N9/82

Domestic Patent References:

JPH07277890A	1995-10-24
JPH04104992A	1992-04-07
JPH04238895A	1992-08-26
JPS6475678A	1989-03-22
JP2007210815A	2007-08-23
JPH07331441A	1995-12-19

Foreign References:

US20030084839A1

2003-05-08

Attorney, Agent or Firm:

Hiroshi Kobayashi
Eiji Katayama
Norio Omori
Yasuhito Suzuki

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