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Title:
化学気相成長成膜用組成物および低誘電率膜の製造方法
Document Type and Number:
Japanese Patent JP2009516069
Kind Code:
A
Abstract:
A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.

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Inventors:
Teruhiko Kumada
Shinji Eiji
Naoki Yasuda
Tetsuya Yamamoto
Yasutaka Nakatani
Takuya Kamiyama
Application Number:
JP2008524292A
Publication Date:
April 16, 2009
Filing Date:
November 15, 2006
Export Citation:
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Assignee:
Mitsubishi Electric Corporation
Nippon Shokubai Co., Ltd.
International Classes:
C23C16/38; H01L21/312; C07F5/05
Domestic Patent References:
JP2000340689A2000-12-08
JP2003119289A2003-04-23
JP2004140341A2004-05-13
JP2005179232A2005-07-07
JP2005167044A2005-06-23
JP2004186649A2004-07-02
JP2005179232A2005-07-07
JP2005167044A2005-06-23
JP2004186649A2004-07-02
JP2000340689A2000-12-08
JP2003119289A2003-04-23
JP2004140341A2004-05-13
Foreign References:
WO2005035824A12005-04-21
WO2005035824A12005-04-21
Attorney, Agent or Firm:
Hatta International Patent Corporation



 
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