Title:
液体ZnでのSiHCl3の還元によるSiの製造方法
Document Type and Number:
Japanese Patent JP2010504269
Kind Code:
A
Abstract:
The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiHCl3 is converted to Si metal by contacting gaseous SiHCl3 with liquid Zn, thereby obtaining a Si-bearing alloy, H2 and ZnCl2, which are separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiHCl3 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.
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Inventors:
Eric Robert
Teacco Jerema
Teacco Jerema
Application Number:
JP2009528635A
Publication Date:
February 12, 2010
Filing Date:
September 18, 2007
Export Citation:
Assignee:
Umicore S.A.
International Classes:
C01B33/037; C01B33/033; C22B19/20
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Takahashi
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Takahashi
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard