Title:
窒化物組み込み用のシリコンに対するジルコニウムおよびハフニウムホウ化物合金テンプレート
Document Type and Number:
Japanese Patent JP2010538949
Kind Code:
A
Abstract:
Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
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Inventors:
Couvetakis, John
Luka, Radeck
Luka, Radeck
Application Number:
JP2009544994A
Publication Date:
December 16, 2010
Filing Date:
January 04, 2008
Export Citation:
Assignee:
ARIZONA BOARD OF REGENTS,a body corporate acting on behalf of ARIZONA STATE UNIVERSITY
International Classes:
C30B29/38; C23C16/34; C23C16/38; C30B23/08; H01L21/203
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Atsushi Honda
Miho Ikegami
Makoto Onda
Atsushi Honda
Miho Ikegami