Title:
光量子リングレーザ及びその製造方法
Document Type and Number:
Japanese Patent JP2011510497
Kind Code:
A
Abstract:
A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.
Inventors:
Kwon, Oh Dae
Shin, Mi-hyang
Lee, Seung Yoon
Jean, Yun-Hub
Kim, Yoon Chun
Yong, Junho
Shin, Mi-hyang
Lee, Seung Yoon
Jean, Yun-Hub
Kim, Yoon Chun
Yong, Junho
Application Number:
JP2010543043A
Publication Date:
March 31, 2011
Filing Date:
October 16, 2008
Export Citation:
Assignee:
Postec Academy-Industry Foundation
International Classes:
H01S5/183
Domestic Patent References:
| JPH11220219A | 1999-08-10 | |||
| JP2007531263A | 2007-11-01 | |||
| JP2003234542A | 2003-08-22 | |||
| JPH06283818A | 1994-10-07 | |||
| JP2005347747A | 2005-12-15 |
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa