Title:
圧電又は強誘電応力誘起ライナを有する相変化材料セル
Document Type and Number:
Japanese Patent JP2014504450
Kind Code:
A
Abstract:
An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and forming a top electrode over the phase change material. Depositing the piezoelectric material in the pore may include conforming the piezoelectric material to at least one wall defining the pore such that the piezoelectric material is deposited between the phase change material and the wall. The conformal deposition may be achieved by chemical vapor deposition (CVD) or by atomic layer deposition (ALD).
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Inventors:
Dubuldue, Catherine, A.
Frank, Martin, M.
Legend Run, Bipin
Schlot, Alejandro, Gee.
Frank, Martin, M.
Legend Run, Bipin
Schlot, Alejandro, Gee.
Application Number:
JP2013543222A
Publication Date:
February 20, 2014
Filing Date:
December 01, 2011
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L27/105; G11C13/00; H01L41/047; H01L41/09; H01L45/00
Domestic Patent References:
| JP2005150694A | 2005-06-09 | |||
| JP2010013327A | 2010-01-21 | |||
| JP2006120810A | 2006-05-11 | |||
| JP2005150694A | 2005-06-09 | |||
| JP2010013327A | 2010-01-21 | |||
| JP2009218598A | 2009-09-24 | |||
| JP2011103323A | 2011-05-26 |
Foreign References:
| WO2010037611A1 | 2010-04-08 | |||
| US20100309714A1 | 2010-12-09 | |||
| US7848135B2 | 2010-12-07 | |||
| US20100002499A1 | 2010-01-07 | |||
| WO2010037611A1 | 2010-04-08 | |||
| US20100309714A1 | 2010-12-09 | |||
| US7848135B2 | 2010-12-07 | |||
| US20100002499A1 | 2010-01-07 | |||
| US20120002465A1 | 2012-01-05 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Tasaichi Tanae