Title:
III族元素の窒化物に基づく層構造および半導体素子
Document Type and Number:
Japanese Patent JP2014509445
Kind Code:
A
Abstract:
A group-III-nitride based layer sequence fabricated by means of an epitaxial process on a silicon substrate, the layer sequence comprising at least one doped first group-III-nitride layer (105) having a dopant concentration larger than 1×1018 cm-3, a second group-III-nitride layer (106) having a thickness of at least 50 nm and an n-type or p-type dopant concentration of less than 5×1018 cm-3, and an active region made of a group-III-nitride semiconductor material, wherein the first group-III-nitride layer comprises at least one n-type dopant selected from the group of elements formed by germanium, tin, lead, oxygen, sulphur, selenium and tellurium or a at least one p-type dopant, and wherein the active region has a volume density of either screw-type or edge type dislocations below 5×109 mm-3.
Inventors:
Armin Dartger
Alois Crost
Alois Crost
Application Number:
JP2013546694A
Publication Date:
April 17, 2014
Filing Date:
December 23, 2011
Export Citation:
Assignee:
AZZURRO SEMICONDUCTORS AG
International Classes:
H01L29/207; H01L21/20; H01L21/205; H01L29/06; H01L29/15; H01L29/47; H01L29/861; H01L29/868; H01L29/872; H01L33/12; H01L33/32
Attorney, Agent or Firm:
Takuya Kuno
Kiyoshi Kuruma
Shuichi Sumiyoshi
Kiyoshi Kuruma
Shuichi Sumiyoshi