Title:
端面発光型半導体レーザ
Document Type and Number:
Japanese Patent JP2014516211
Kind Code:
A
Abstract:
An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.
Inventors:
Lindberg Hans
Application Number:
JP2014514093A
Publication Date:
July 07, 2014
Filing Date:
June 08, 2012
Export Citation:
Assignee:
Osram Opto Semiconductors GmbH
International Classes:
H01S5/0625; H01S5/026
Domestic Patent References:
| JP2009088532A | 2009-04-23 | |||
| JPH02310986A | 1990-12-26 | |||
| JPS63148692A | 1988-06-21 |
Foreign References:
| US20090147815A1 | 2009-06-11 | |||
| EP2337169A2 | 2011-06-22 | |||
| DE102007058950A1 | 2009-04-02 |
Attorney, Agent or Firm:
Koichi Washida