Title:
トランジスタ及びその形成方法
Document Type and Number:
Japanese Patent JP2014516210
Kind Code:
A
Abstract:
A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10−7 cm2/Vs and more preferably greater than 10−6 cm2/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.
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Inventors:
Beverly Anne Brown
Simon Dominique Ogier
Marco Palumbo
Kelly Laura McCall
Simon Dominique Ogier
Marco Palumbo
Kelly Laura McCall
Application Number:
JP2014511955A
Publication Date:
July 07, 2014
Filing Date:
May 24, 2012
Export Citation:
Assignee:
CENTRE FOR PROCESS INNOVATION LIMITED
International Classes:
H01L29/786; C08G61/10; C08L49/00; C08L79/04; H01L21/336; H01L51/05; H01L51/30
Domestic Patent References:
| JP2009522781A | 2009-06-11 | |||
| JP2007519227A | 2007-07-12 | |||
| JP2009524226A | 2009-06-25 | |||
| JP2007518842A | 2007-07-12 | |||
| JP2007528811A | 2007-10-18 |
Attorney, Agent or Firm:
Kenji Sugimura
Hitomi Yuki
Rintaro Takahashi
Hitomi Yuki
Rintaro Takahashi