Title:
LAMINATE, COMPOSITION FOR FORMING PROTECTIVE LAYER, KIT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015191940
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide: a composition for forming a protective layer, which hardly forms a recessed and projected pattern in a silicon substrate-side surface (polished surface) of a device wafer after polishing of a silicon substrate of the device wafer, and which is capable of adequately forming an electrode at a high temperature by a CVD process; a laminate which has a protective layer that is obtained using the composition for forming a protective layer; a kit including the composition for forming a protective layer; and a method for manufacturing a semiconductor device.SOLUTION: A composition for forming a protective layer for bonding a wafer and a supporting substrate with each other contains a resin having a melt flow rate of 4-150 g/10 min or less at 200°C under a load of 10 kg in accordance with JIS K-7210. The composition for forming a protective layer has a Young's modulus of 0.02 GPa or less in accordance with JIS K-7127.
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Inventors:
YOSHIDA MASASHI
KOYAMA ICHIRO
KOYAMA ICHIRO
Application Number:
JP2014066386A
Publication Date:
November 02, 2015
Filing Date:
March 27, 2014
Export Citation:
Assignee:
FUJIFILM CORP
International Classes:
H01L21/02; B32B27/00; C08L101/12; C09D7/12; C09D125/04; C09D125/10; C09D153/02; C09D201/00; H01L21/304; H01L21/683
Domestic Patent References:
| JP2008060255A | 2008-03-13 | |||
| JP2012062405A | 2012-03-29 | |||
| JP2013225676A | 2013-10-31 | |||
| JP2010225676A | 2010-10-07 | |||
| JP2012188650A | 2012-10-04 | |||
| JP2013120805A | 2013-06-17 | |||
| JP2012124467A | 2012-06-28 | |||
| JP2013503366A | 2013-01-31 |
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes