Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2018125500
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing current collapse, reducing leak current, and suppressing a decrease in reliability, and a method for manufacturing the same.SOLUTION: A semiconductor device 10 comprises: a nitride-based semiconductor layer 17, a first electrode 21 in contact with the nitride-based semiconductor layer 17, a second electrode 20 in contact with the nitride-based semiconductor layer 17, and an auxiliary film 23 electrically connected to the first electrode 21, separated from the second electrode 20, and composed of a p-type metal oxide semiconductor in contact with the nitride-based semiconductor layer 17.SELECTED DRAWING: Figure 1
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Inventors:
SATO KEN
Application Number:
JP2017019058A
Publication Date:
August 09, 2018
Filing Date:
February 03, 2017
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2008034438A | 2008-02-14 | |||
| JP2008159681A | 2008-07-10 |
Foreign References:
| WO2014174810A1 | 2014-10-30 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi