MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2713122

Kind Code:

B2

Abstract:

PURPOSE: To suppress the invasion of group-IV atoms into a group V site, reduce active positive holes and improve a side gate breakdown strength by a method wherein, after group V ions are implanted and ions for inactivation of electrons are implanted into an n-type III-V compound semiconductor doped with group-IV atoms, a heat treatment is performed, etc.
CONSTITUTION: Conductive compound semiconductor layers 3 and 4 composed of n-type III-V compound semiconductor layers doped with group IV atoms are formed on a semi-insulating substrate 1. Then impurity ions for inactivation of electrons are implanted into the substrate 1 which has the conductive compound semiconductor layers 3 and 4 and, further, impurities containing at least group V ions are implanted into the substrate 1. After that, a heat trearment is performed to isolate a doped region 6 electrically. For instance, an undoped GaAs layer 2, a high impurity concentration first n-type GaAs layer 3 and, further, a high impurity concentration second n-type GaAs layer 4 are successively built up. Then arsenic ions are selectively implanted into the isolated region 6 and, further, boron ions are implanted into the region 6.

Inventors:

Tsukada Anri

Application Number:

JP28991493A

Publication Date:

February 16, 1998

Filing Date:

October 26, 1993

Export Citation:

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