Title:
LIGHT EMITTING DEVICE GROWN ON SILICON SUBSTRATE
Document Type and Number:
Japanese Patent JP2019004164
Kind Code:
A
Abstract:
To provide a light emitting device grown on a silicon substrate that exhibits improved light extraction.SOLUTION: A method includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a light emitting region 42 disposed between an n-type region 40 and a p-type region 44. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured.SELECTED DRAWING: Figure 3
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Inventors:
RAJWINDER SINGH
JOHN EDWARD EPLER
JOHN EDWARD EPLER
Application Number:
JP2018150949A
Publication Date:
January 10, 2019
Filing Date:
August 10, 2018
Export Citation:
Assignee:
KONINKLIJKE PHILIPS NV
International Classes:
H01L33/32; H01L33/22; H01L33/44
Domestic Patent References:
| JP2012031047A | 2012-02-16 | |||
| JP2003234501A | 2003-08-22 | |||
| JP2007096130A | 2007-04-12 | |||
| JP2008117922A | 2008-05-22 | |||
| JP2005303285A | 2005-10-27 | |||
| JP2004511080A | 2004-04-08 | |||
| JP2007533164A | 2007-11-15 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki