Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2019009357
Kind Code:
A
Abstract:
To enhance performance of a semiconductor device including a power transistor arranged by use of silicon carbide by reducing a leak current in the power transistor.SOLUTION: A semiconductor device comprises: a power transistor formed on an epitaxial layer EPI including silicon carbide as a primary component. In the semiconductor device, the power transistor comprises: an insulation film OXF formed over a side wall of a gate electrode GE; and an interlayer insulation film IL formed so as to cover the gate electrode GE and the insulation film OXF. The insulation film OXF is higher, in density, than the interlayer insulation film IL. The insulation film OXF includes conductive type impurities at an impurity density no more than 1/100 of a maximum impurity density of a conductive type impurity included in the gate electrode GE.SELECTED DRAWING: Figure 13
Inventors:
SATO SHINTARO
SHIMIZU HARUKA
SAGAWA MASAKAZU
SHIMIZU HARUKA
SAGAWA MASAKAZU
Application Number:
JP2017125609A
Publication Date:
January 17, 2019
Filing Date:
June 27, 2017
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12
Attorney, Agent or Firm:
Tsutsui International Patent Office