Title:
SUSCEPTOR, CVD APPARATUS AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JP2019047085
Kind Code:
A
Abstract:
To provide a susceptor which can realize conveyance without roughening the backside of a wafer during epitaxial growth with the wafer remaining stably placed on the susceptor even if the wafer warps in the case of conveying the wafer to a reactor staying in a high-temperature condition.SOLUTION: A susceptor 10 is arranged to hold a wafer in a CVD apparatus which operates to form a film on the wafer by chemical vapor phase growth. The susceptor comprises an outside susceptor 2 and an inside susceptor 1. The outside susceptor 2 has: an opening 2c for housing the inside susceptor 1 in such a way that the inside susceptor is fit therein; and a wafer setting face 2a to put an outer peripheral portion Ws of the wafer on. The inside susceptor 1 has a protruding part 1a on a face 1b opposed to the wafer W, and the protruding part 1a has a height h enough to keep itself from touching the wafer W when the wafer W is set on the susceptor.SELECTED DRAWING: Figure 1
Inventors:
UMEDA KIICHI
FUKADA KEISUKE
ISHIBASHI NAOTO
ATSUMI HIRONORI
FUKADA KEISUKE
ISHIBASHI NAOTO
ATSUMI HIRONORI
Application Number:
JP2017172012A
Publication Date:
March 22, 2019
Filing Date:
September 07, 2017
Export Citation:
Assignee:
SHOWA DENKO KK
International Classes:
H01L21/205; C23C16/42; C23C16/44; H01L21/683
Domestic Patent References:
| JP2009270143A | 2009-11-19 | |||
| JP2013225665A | 2013-10-31 | |||
| JP2011018772A | 2011-01-27 | |||
| JP2007220888A | 2007-08-30 | |||
| JP2014116356A | 2014-06-26 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Norihiko Ara
Tomoo Katsumata