Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019062065
Kind Code:
A
Abstract:
To provide a semiconductor device and a method of manufacturing the same capable of suppressing reduction in reliability of a memory cell.SOLUTION: A semiconductor device 1 includes: a transistor 200 formed on a semiconductor substrate 110, and that has a first gate 220 covered with a silicon nitride film 10; and a memory cell 100 formed on the semiconductor substrate, and that has a second gate 160 not covered with the silicon nitride film. A method of manufacturing the semiconductor device includes the following steps of: forming on a surface of the semiconductor substrate the first gate that configures the transistor and the second gate that configures the memory cell; forming the silicon nitride film that covers surfaces of the first gate and the second gate; and selectively removing a part covering the surface of the second gate, of the silicon nitride film.SELECTED DRAWING: Figure 4
Inventors:
SHIBAGUCHI TAKU
Application Number:
JP2017185091A
Publication Date:
April 18, 2019
Filing Date:
September 26, 2017
Export Citation:
Assignee:
LAPIS SEMICONDUCTOR CO LTD
International Classes:
H01L27/11558; H01L21/336; H01L27/11521; H01L29/788; H01L29/792
Domestic Patent References:
| JP2008218625A | 2008-09-18 | |||
| JP2009016462A | 2009-01-22 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda