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Title:
METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR, AND LIGHT-IRRADIATION DEVICE
Document Type and Number:
Japanese Patent JP2019062067
Kind Code:
A
Abstract:
To form, on a substrate, an organic semiconductor to make a semiconductor device as a crystal of good crystallinity.SOLUTION: A method for manufacturing an organic semiconductor according to the present invention comprises the steps of: forming a pattern on a substrate by a liquid containing a material of the organic semiconductor (step S302); and applying a light beam to the coated liquid to crystallize the organic semiconductor (step S303). In the method, the following steps are executed on the continuous pattern at least once, thereby crystallizing the whole pattern: the first step of applying a light beam to, as a target region, a primary irradiation region which is a partial region including a peripheral edge of the pattern; and then, the second step of applying a light beam to, as a target region, a secondary irradiation region including or adjacent to a boundary of an irradiated region subjected to light beam irradiation, and an unirradiated region in the pattern.SELECTED DRAWING: Figure 3

Inventors:
MIYAKE TAKASHI
Application Number:
JP2017185101A
Publication Date:
April 18, 2019
Filing Date:
September 26, 2017
Export Citation:
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Assignee:
SCREEN HOLDINGS CO LTD
International Classes:
H01L51/40; H01L21/208; H01L21/336; H01L29/786; H01L51/05
Domestic Patent References:
JP2016192524A2016-11-10
JP2008066439A2008-03-21
JP2003229548A2003-08-15
JP2014179371A2014-09-25
Attorney, Agent or Firm:
Kakusho Shoichi
Kazumasa Onishi



 
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