Title:
MASK BLANK, PHASE SHIFT MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019144444
Kind Code:
A
Abstract:
To provide a mask blank in which ArF light resistance and chemical resistance are improved in whole phase shift film, and steps of a pattern side wall of the phase shift film generated during dry etching and EB defect correction are reduced.SOLUTION: There is constituted a mask blank in which a phase shift film 2 on a light transmissive substrate 1 contains at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is formed by a silicon nitride material, the oxygen-containing layer is formed by a silicon oxide material, a value of maximum peak in the nitrogen-containing layer PSi_f divided by maximum peak in the light transmissive substrate PSi_s, (PSi_f)/(PSi_s) of 1.09 or less when the maximum peak of a photoelectron intensity of Si2p narrow spectrum PSi_f is obtained by conducting an X ray photoelectron spectroscopy analysis on the nitrogen-containing layer and the maximum peak of a photoelectron intensity of Si2p narrow spectrum PSi_s is obtained by conducting an X ray photoelectron spectroscopy analysis on the light transmissive substrate 1.SELECTED DRAWING: Figure 1
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Inventors:
MAEDA HITOSHI
OKUBO RYO
HORIGOME YASUTAKA
OKUBO RYO
HORIGOME YASUTAKA
Application Number:
JP2018029428A
Publication Date:
August 29, 2019
Filing Date:
February 22, 2018
Export Citation:
Assignee:
HOYA CORP
International Classes:
G03F1/32; G03F7/20
Attorney, Agent or Firm:
Shinto International Patent Office