Title:
Cu-Ni ALLOY SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2019151916
Kind Code:
A
Abstract:
To provide a Cu-Ni alloy sputtering target capable of preventing coarsening of crystal grains, and depositing stably a Cu-Ni alloy film in which a film thickness or a composition is uniformized.SOLUTION: In a Cu-Ni alloy sputtering target containing Ni, and having a residue comprising Cu and inevitable impurities, a Ni oxide phase exists on a grain boundary of a parent phase comprising a solid solution of Cu and Ni, and the area ratio of the Ni oxide phase is in the range of 0.1% or more and 5.0% or less.SELECTED DRAWING: None
Inventors:
IO KENSUKE
KATO SHINJI
KATO SHINJI
Application Number:
JP2019000734A
Publication Date:
September 12, 2019
Filing Date:
January 07, 2019
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; C22C9/06; C22C19/03; H01L21/285
Domestic Patent References:
| JP2015079941A | 2015-04-23 | |||
| JP2016157925A | 2016-09-01 |
Foreign References:
| WO2015170534A1 | 2015-11-12 | |||
| CN105734507A | 2016-07-06 | |||
| WO2018207770A1 | 2018-11-15 |
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami