Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019176124
Kind Code:
A
Abstract:
To provide a method of manufacturing a semiconductor device capable of improving productivity and a semiconductor device.SOLUTION: The method of manufacturing a semiconductor device includes steps of: preparing a wafer 50 having an upper surface and made of sapphire, the upper surface including a first region 11 and a second region 12 provided surrounding the first region, the second region provided at a position higher or lower than the first region by 2 μm or more; and forming a semiconductor layer including an Al-containing layer made of AlGaN(0.03≤z≤0.15) on the upper surface thereof.SELECTED DRAWING: Figure 2
More Like This:
Inventors:
MIYAMOTO YOSHINORI
OKABE TOKUTARO
KAGOSHIMA YUYA
HIGASHIYA KEISUKE
OZAKI CHIAKI
OKABE TOKUTARO
KAGOSHIMA YUYA
HIGASHIYA KEISUKE
OZAKI CHIAKI
Application Number:
JP2018178761A
Publication Date:
October 10, 2019
Filing Date:
September 25, 2018
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L33/20; C30B25/18; C30B29/38; H01L21/205; H01L21/338; H01L29/778; H01L29/812; H01L33/32; H01S5/343
Domestic Patent References:
| JP2014146731A | 2014-08-14 | |||
| JP2013118384A | 2013-06-13 | |||
| JP2015211136A | 2015-11-24 |
Foreign References:
| CN207134376U | 2018-03-23 | |||
| WO2012018116A1 | 2012-02-09 |
Attorney, Agent or Firm:
Masahiko Hinataji