Title:
DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2019179930
Kind Code:
A
Abstract:
To improve reliability of a drive circuit.SOLUTION: A second high-resistance drain region 432 (or first high-resistance drain region 431) is formed in an oxide semiconductor layer which overlaps a drain electrode layer 405b (and source electrode layer 405a). By forming the second high-resistance drain region 432, a structure can be achieved where conductivity can be gradually varied from the drain electrode layer to the second high-resistance drain region 432 and a channel formation region. Accordingly, a structure can be achieved where locally high electric field is prevented from being applied because the high-resistance drain region serves as a buffer even when high electric field is applied between the gate electrode layer 401 and the drain electrode layer 405b when the drain electrode layer 405b is connected to wiring for supplying high power supply potential VDD to be operated thereby to achieve improved breakdown voltage of a transistor.SELECTED DRAWING: Figure 2
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Inventors:
YAMAZAKI SHUNPEI
SAKATA JUNICHIRO
MIYAKE HIROYUKI
KUWABARA HIDEAKI
SAKATA JUNICHIRO
MIYAKE HIROYUKI
KUWABARA HIDEAKI
Application Number:
JP2019119440A
Publication Date:
October 17, 2019
Filing Date:
June 27, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G02F1/1343; G02F1/1368; G09F9/30
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Foreign References:
| US20090167974A1 | 2009-07-02 |