Title:
METHOD OF MANUFACTURING TRANSISTOR
Document Type and Number:
Japanese Patent JP2020021962
Kind Code:
A
Abstract:
To improve electrical characteristics of a transistor by adjusting physical property values of an oxide semiconductor layer, since correlation of the electrical characteristics of the transistor using the oxide semiconductor layer, and physical property values of the oxide semiconductor layer is not clear yet, because a field of an oxide semiconductor layer is the field began to receive attention in recent years.SOLUTION: A semiconductor device has at least a gate electrode, an oxide semiconductor layer, and a gate insulation layer sandwiched between the gate electrode and the oxide semiconductor layer, where the oxide semiconductor layer has a relative dielectric constant of 13 or more (or 14 or more).SELECTED DRAWING: Figure 2
Inventors:
MIYANAGA SHOJI
HONDA TATSUYA
HONDA TATSUYA
Application Number:
JP2019201505A
Publication Date:
February 06, 2020
Filing Date:
November 06, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| JP2009212476A | 2009-09-17 | |||
| JP2007311404A | 2007-11-29 | |||
| JP2008103609A | 2008-05-01 | |||
| JP2006060209A | 2006-03-02 | |||
| JP2008277665A | 2008-11-13 |
Foreign References:
| WO2009075281A1 | 2009-06-18 |