Title:
【発明の名称】高移動度トランジスタ
Document Type and Number:
Japanese Patent JP2621854
Kind Code:
B2
More Like This:
JPS63116471 | FIELD EFFECT TRANSISTOR |
JP2005039296 | FIELD-EFFECT TRANSISTOR |
Inventors:
Miyoko Watanabe
Application Number:
JP11638585A
Publication Date:
June 18, 1997
Filing Date:
May 31, 1985
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/812; H01L21/22; H01L21/338; H01L29/778; H01L29/80; (IPC1-7): H01L29/778; H01L21/338; H01L29/812
Domestic Patent References:
JP55160473A | ||||
JP5713773A |
Attorney, Agent or Firm:
Hideaki Tokawa (1 outside)