Title:
【発明の名称】ドライエッチング方法
Document Type and Number:
Japanese Patent JP2876649
Kind Code:
B2
Abstract:
PURPOSE:To effectively enhance an etch rate and to restrain a loading effect by a method wherein chlorine trifluoride (CIF3) is added to an etching gas. CONSTITUTION:The surface of an SiO2 film 11 formed on a silicon substrate 10 composed of single-crystal silicon is coated with a resist 12; a patterning operation is executed in such a way that the resist is opened in a desired position used to form a trench. Then, a reactive ion etching operation is executed by making use of the resist 12 as a mask; an opening part 11a is formed in the SiO2 film 11. Then, the resist 12 is removed; after that, an etching operation is executed by using an ECR etching apparatus of a blas application type by making use of the SiO2 film 11 as a mask; the trench of a prescribed depth is formed. In this case, chlorine trifluoride in a ratio of 10% is added to a gas system which forms sidewall protective films 15 by a reaction product. A fluorine radiacal (F*) and a chlorine radical (Cl*) which are produced by dissociation of the added chlorine trifluorine (ClF3) act to increase an etch rate of the silicon substrate 10.
More Like This:
Inventors:
KADOMURA SHINGO
Application Number:
JP25344189A
Publication Date:
March 31, 1999
Filing Date:
September 28, 1989
Export Citation:
Assignee:
SONII KK
International Classes:
H01L21/302; H01L21/306; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP6482533A |
Attorney, Agent or Firm:
Fujiya Shiga (1 person outside)