Title:
【発明の名称】酸化物超電導体薄膜
Document Type and Number:
Japanese Patent JP3021764
Kind Code:
B2
Abstract:
PURPOSE:To suitable obtain a thin oxide superconductor film having low surface resistance by forming the thin film in such a way that the C-axis of crystal is orientated in the direction of perpendicular line on a substrate and the uppermost layer is made into a conductive Cu-O atomic layer. CONSTITUTION:Cells (a), (b), (c) and (d), a substrate 2, a heater 3, shutters (e), (f), (g) and (h) and a quartz oscillation type film thickness gauge 4, etc., are arranged to give a chamber 1 of molecular beam epitaxial device. Then the cells (a-b) are sucessively charged with Bi2O3, etc., and the chamber 1 is maintained in high vacuum by evacuating with a pump 5. Then, an evaporation source of Bi2O3, etc., is heated by the heater 3, the shutters (e-h) are successively opened one by one for a given time while introducing N2O, etc., from a nozzle 9, an atomic layer of Ca, CuO chain, etc., is piled and deposited on the substrate 2 and a unit lattice is formed while controlling thickness by the film thickness gauge 4. Then these operations are repeated plural times, a Cu-O layer is formed on the uppermost layer to produce the thin oxide superconductor film of Bi type composition.
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Inventors:
Kouki Sato
Masakazu Matsui
Masakazu Matsui
Application Number:
JP11535091A
Publication Date:
March 15, 2000
Filing Date:
April 18, 1991
Export Citation:
Assignee:
THE FURUKAW ELECTRIC CO.,LTD.
International Classes:
C04B41/87; C01G1/00; C01G3/00; C30B29/22; H01B12/06; H01P11/00; (IPC1-7): C30B29/22; C01G1/00; C01G3/00; H01B12/06; H01P11/00
Domestic Patent References:
| JP1130420A | ||||
| JP1246371A | ||||
| JP1268865A | ||||
| JP25581A | ||||
| JP2239104A | ||||
| JP312323A | ||||
| JP2306508A | ||||
| JP4329878A |
Other References:
【文献】国際公開90/13517(WO,A1)