Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3094914
Kind Code:
B2
Abstract:
There is herein disclosed a self-align-silicide formation technique which can be applied to miniaturized semiconductor elements. Heat treatment steps for silicidation of a high-melting metal film are two steps of a first heat treatment under an atmosphere containing no nitrogen and a second heat treatment under an atmosphere containing nitrogen. The first heat treatment is carried out under the atmosphere containing no nitrogen, whereby the nitriding of titanium can be restrained. In consequence, the thin silicide film can be formed in a self align state.
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Inventors:
Yoshihisa Matsubara
Application Number:
JP18753696A
Publication Date:
October 03, 2000
Filing Date:
July 17, 1996
Export Citation:
Assignee:
NEC
International Classes:
H01L21/28; H01L21/3205; H01L21/336; H01L23/52; H01L29/78; (IPC1-7): H01L21/28; H01L21/3205; H01L21/336; H01L29/78
Domestic Patent References:
| JP62298109A | ||||
| JP645279A | ||||
| JP5267212A | ||||
| JP61263159A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)