Title:
【発明の名称】絶縁ゲート型電界効果半導体装置の作製方法
Document Type and Number:
Japanese Patent JP3361310
Kind Code:
B2
More Like This:
| JPS63302561 | INTERFACE MIS TYPE FIELD-EFFECT TRANSISTOR |
Inventors:
Yukio Yamauchi
Application Number:
JP2000074290A
Publication Date:
January 07, 2003
Filing Date:
March 16, 2000
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/43; H01L21/28; H01L29/423; H01L29/49; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; H01L21/28; H01L29/78
Domestic Patent References:
| JP6268213A | ||||
| JP55151366A | ||||
| JP4225281A | ||||
| JP555560A | ||||
| JP61190981A | ||||
| JP1292860A | ||||
| JP344032A | ||||
| JP1276726A |
Attorney, Agent or Firm:
Makoto Hagiwara