Title:
光電変換素子
Document Type and Number:
Japanese Patent JP3603745
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To solve the problem that the amount of a saturation signal charge decreases and the inclination of knee characteristics cannot be reduced fully only by the control of the impurity concentration profile of the P-type region when the impurity concentration profile of a P-type region is changed for decreasing the inclination of the knee characteristics while the inclination of the knee characteristics of a photoelectric conversion element in vertical-type overflow drain structure are expressed by the function of an impurity concentra tion profile such as the impurity concentration and thickness of the P-type region for forming a VOD barrier. SOLUTION: Directly below the center part of an N-type region 103 of a photoelectric conversion element 201, the impurity concentration of a P-type region 122 (the first barrier region) that is buried into an N-type silicon substrate 101 for forming is set higher than that of other P-type regions 102 (the second barrier region), or the thickness of the P-type region 122 is set thicker than that of the P-type region 102. The inclination of the knee characteristics can be reduced without increasing the influence of a P+-channel stopper 105 and a P-type region 107 to a VOD barrier in the P-type region 122 and reducing the amount of saturation signal charge, thus increasing the dynamic range.
Inventors:
Akihito Tanabe
Application Number:
JP2000131548A
Publication Date:
December 22, 2004
Filing Date:
April 26, 2000
Export Citation:
Assignee:
NEC
International Classes:
H01L27/148; H04N5/335; H04N5/355; H04N5/369; H04N5/3728; (IPC1-7): H01L27/148; H04N5/335
Domestic Patent References:
| JP59087155U | ||||
| JP10209425A | ||||
| JP59019481A | ||||
| JP63065668A |
Attorney, Agent or Firm:
Akio Suzuki