Title:
光電変換素子
Document Type and Number:
Japanese Patent JP3603744
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To solve the problem that a low voltage and low power consumption cannot be achieved since a substrate voltage is increased when the impurity concentration profile of a P-type region is changed to increase the inclination of knee characteristics while the substrate voltage and the inclination of the knee characteristics of a photoelectric conversion element in vertical-type overflow drain structure are expressed by the function of an impurity concentration profile such as the impurity concentration and thickness of the P-type region for forming a VOD barrier. SOLUTION: Directly below the center part of an N-type region 103 of a photoelectric conversion element 201, the impurity concentration of a P-type region 122 that is buried into an N-type silicon substrate 101 for forming is set higher than that of a P-type region 102 around the P-type region 122, or the thickness of the P-type region 122 is set thicker than that of the P-type region 102. Influence to the VOD barrier in the P-type region 122 by a P+ channel stopper 105 and the P-type region 107 is reduced, the inclination of knee characteristics is increased, at the same time the substrate voltage is decreased, the power consumption in a solid-state image pickup element such as a CCD image pickup is reduced, at the same time, the dynamic range of the quantity of light is expanded, and gradation can be fined.
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Inventors:
Akihito Tanabe
Application Number:
JP2000131547A
Publication Date:
December 22, 2004
Filing Date:
April 26, 2000
Export Citation:
Assignee:
NEC
International Classes:
H01L27/148; H04N5/335; H04N5/355; H04N5/369; H04N5/3722; (IPC1-7): H01L27/148; H04N5/335
Domestic Patent References:
| JP6053474A | ||||
| JP5130517A | ||||
| JP10116975A |
Attorney, Agent or Firm:
Akio Suzuki