Title:
酸化剤の分圧の制御による熱酸化プロセス制御
Document Type and Number:
Japanese Patent JP3895326
Kind Code:
B2
Abstract:
The invention relates to a method for generating an oxide layer on a substrate, e.g. a silicon wafer used for the manufacturing of microchips. The substrate is placed in an oven and an oxidising medium comprising oxygen is fed to the oven. To control the growth of the oxide layer the oxygen partial pressure in the exhaust is determined and depending on the measured value the feed of the components of the oxidising mediums are adjusted, so that the oxygen partial pressure in the oxygen gases is kept constant. The method allows the reproducible formation of oxide layers with a defined layer thickness.
Inventors:
Tognetti, Marcel
Application Number:
JP2003507877A
Publication Date:
March 22, 2007
Filing Date:
June 21, 2002
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L21/31; H01L21/316; C23C8/10; C30B33/00
Domestic Patent References:
| JP9134912A | ||||
| JP8172084A | ||||
| JP2001274154A | ||||
| JP629229A | ||||
| JP6342761A | ||||
| JP2000182958A | ||||
| JP2002151502A |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office