Title:
メモリセル装置およびその製造方法
Document Type and Number:
Japanese Patent JP4027040
Kind Code:
B2
Abstract:
A memory cell configuration includes a magnetoresistive element with an annular cross-section in a layer plane, a first line and a second line. The first and second lines crossing each other. The magnetoresistive element is disposed in the crossing region between the first line and the second line. The first line and/or the second line include at least one first portion, in which the predominant current component is oriented parallel to the layer plane, and one second portion, in which the predominant current component is oriented perpendicular to the layer plane.
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Inventors:
Siegfried Schwarzul
Application Number:
JP2000603106A
Publication Date:
December 26, 2007
Filing Date:
February 01, 2000
Export Citation:
Assignee:
Infineon Technolgies SC300 GmbH & Co.KG
International Classes:
H01L21/8246; G11C11/14; G11C11/15; G11C11/155; H01F10/16; H01L27/105; H01L43/08
Domestic Patent References:
| JP9509775A | ||||
| JP11501438A |
Foreign References:
| US5541868 |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel