半導体レーザ素子及びその製造方法

Title:

半導体レーザ素子及びその製造方法

Document Type and Number:

Japanese Patent JP4030260

Kind Code:

B2

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Inventors:

Ryoji Hiroyama
Yasuhiko Nomura
Kotaro Furusawa
Kunio Takeuchi
Shigeyuki Okamoto

Application Number:

JP2000284545A

Publication Date:

January 09, 2008

Filing Date:

September 20, 2000

Export Citation:

Assignee:

Sanyo Electric Co., Ltd.

International Classes:

H01S5/223

Domestic Patent References:

Attorney, Agent or Firm:

Hiroshi Kakutani

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