Title:
薄膜作製方法および薄膜作製装置
Document Type and Number:
Japanese Patent JP4120974
Kind Code:
B2
Abstract:
A combined RF-DC magnetron sputtering method stops the production of tracking arcs and promotes the consistent manufacture of thin films during the manufacture of thin films by such RF-DC magnetron sputtering. Magnets 121, 122 are placed behind the target 111. RF and DC power are simultaneously supplied to the target to produce a plasma, and sputtering is used to manufacture a thin film on a substrate 106 facing the target. The supply of RF and DC power to the target is simultaneously and periodically stopped. The time that the power is supplied is shorter than the time needed to produce tracking arcs. The RF and DC power is both supplied and stopped simultaneously, and RF and DC power is intermittently supplied to the target.
More Like This:
Inventors:
Keiji Ishibashi
Application Number:
JP17643197A
Publication Date:
July 16, 2008
Filing Date:
June 17, 1997
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
C23C14/08; C23C14/35; C23C14/54
Domestic Patent References:
| JP4325676A | ||||
| JP7090573A | ||||
| JP2054764A | ||||
| JP7258845A |
Attorney, Agent or Firm:
Tamiya Hiroshi