Title:
放射温度測定方法
Document Type and Number:
Japanese Patent JP4166400
Kind Code:
B2
Abstract:
To provide a method and equipment for measuring a radiation temperature both capable of measuring temperatures of a substrate more accurately and stably than ever and equipment for manufacturing semiconductors therein such a radiation temperature measuring method can be applied. A reflectometer 21 irradiates, on a wafer W having Si and SiO2 layers, light of a wavelength that transmits the Si layer and is reflected from the SiO2 layer (an interface between Si and SiO2) to measure reflectance. With the reflectance and radiation energy at the wavelength of the wafer W measured by a radiation thermometer, a temperature of the wafer W is calculated. Thereby, even when a thin film is formed on a rear face of the substrate to blot and to result in a change of a state thereof, by the use of a stable interface in the substrate, temperatures can be measured with precision and stability.
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Inventors:
Shimizu Masahiro
Application Number:
JP2000038707A
Publication Date:
October 15, 2008
Filing Date:
February 16, 2000
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
G01J5/00; G01J5/02; C23C16/52; C23C16/46
Domestic Patent References:
| JP2170024A |
Foreign References:
| WO1999010718A1 |
Attorney, Agent or Firm:
Saichi Suyama