To provide a photovoltaic device capable of producing a high open voltage and a high output.

The photovoltaic device is provided with an n-type single crystal silicon substrate 1 which has surface and rear surface and in which light is made incident from the surface side, a substantially intrinsic nondoped amorphous silicon layer 2 formed on the surface of the n-type single crystal silicon substrate 1, a p-type amorphous silicon layer 3 formed on the surface of the nondoped amorphous silicon layer 2, a transparent conductive film 4 formed on the p-type amorphous silicon layer 3, and a substantially intrinsic nondoped amorphous silicon layer 6 formed on the rear surface of the n-type single crystal silicon substrate 1 at least in a region corresponding to the region where the transparent conductive film 4 is formed.

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