Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP4226804
Kind Code:
B2
Abstract:
A semiconductor device includes a first electrode film, first and second electrode films, first and second connection parts, first and second wirings, and a protective insulating film. The second electrode film opposes the first electrode film. The capacitor insulating film is provided between the first electrode film and the second electrode film. The first and second connection parts are electrically connected to the first and second electrode films, respectively. The first wiring is electrically connected to the first electrode film by the first connection part. The second wiring is electrically connected to the second electrode film by the second connection part. The protective insulating film is provided between the capacitor insulating film and the second electrode film or on the second electrode film.
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Inventors:
Takashi Yoshitomi
Application Number:
JP2001191716A
Publication Date:
February 18, 2009
Filing Date:
June 25, 2001
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/822; H01L27/04; H01L21/02; H01L21/316; H01L21/8242; H01L23/522; H01L27/108
Domestic Patent References:
| JP2001015703A | ||||
| JP11068048A | ||||
| JP10321799A | ||||
| JP5110024A | ||||
| JP63038248A |
Foreign References:
| WO1998044551A1 | ||||
| WO1998031053A1 |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai