To provide an information recording medium which secures high reliability and good repeated rewriting performance even if an interface layer is not provided between a recording layer and a dielectric layer.
The recording layer 4 and the dielectric layers 2 and 6 are formed on the surface of a base 1, and the recording layer 4 causes phase transformation between a crystalline phase and an amorphous phase by irradiation with light or the application of electric energy. The dielectric layers 2 and 6 are oxide-fluoride material layer containing: an oxide of at least one element which is selected from a group GM composed of titanium, zirconium, hafnium, niobium, tantalum, chromium and silicon; and a fluoride of at least one element which is selected from a group GL composed of lanthanum, cerium, praseodymium, neodymium, gadolinium, dysprosium, holmium, erbium and ytterbium.
COPYRIGHT: (C)2004,JPO
Haruhiko Dobita
Takashi Nishihara
Kitaura Hideki
Noboru Yamada
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Yasuo Shibata
Samejima Mutsumi