Title:
非晶質薄膜太陽電池
Document Type and Number:
Japanese Patent JP4253966
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve efficiency of a pin-type amorphous thin film solar battery with a layer of amorphous silicon (μc-Si) comprising fine crystalline phase by restraining characteristics of deterioration after optical irradiation. SOLUTION: A p/i interfacial layer 5 such as amorphous silicon (a-Si) of p-type and low impurity concentration whose band gap is wider than that of a p-layer 6 is held between the μc-Si p-layer 6 and an amorphous silicon germanium (a-SiGe) i-layer 4.
Inventors:
Shinji Fujikake
Application Number:
JP34620699A
Publication Date:
April 15, 2009
Filing Date:
December 06, 1999
Export Citation:
Assignee:
Fuji Electric Systems Co., Ltd.
International Classes:
H01L31/04
Domestic Patent References:
| JP5326992A | ||||
| JP11135818A | ||||
| JP55011329A |
Other References:
Appl.Phys.Lett.,1997年,70[22],p.2975-2977
Attorney, Agent or Firm:
Yoichi Matsumoto
Hiroshi Yamamoto
Hiroshi Yamamoto