Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
半導体発光装置の製造方法
Document Type and Number:
Japanese Patent JP4266234
Kind Code:
B2
Abstract:
A semiconductor light-emitting device is provided, which includes a semiconductor light-emitting element which emits light, and a sealing material made from an optical transparent inorganic material and provided on the semiconductor light-emitting element. The optical transparent inorganic material contains phosphor particles and inorganic filler. The inorganic filer has an average particle diameter of 0.001 to 1 mum and is dispensed in an amount of 25 wt % or less.

More Like This:
JP2010206092NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
JP4583060Manufacturing method of single crystal sapphire substrate and manufacturing method of nitride semiconductor light emitting device
JP4301136Semiconductor light emitting device and its manufacturing method
Inventors:
Ryuko Kono
Suzuki Akiko
Toshihide Takahashi
Takezawa Hatsuo
Application Number:
JP2007087197A
Publication Date:
May 20, 2009
Filing Date:
March 29, 2007
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Toshiba Corporation
International Classes:
H01L33/32; H01L33/50; H01L33/56; H01L33/60; H01L33/62
Domestic Patent References:
JP2008159791A
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto



 
Previous Patent: テクスチャ処理装置

Next Patent: INTER-PROCESSOR COMMUNICATION INFORMATION GENERATING SYSTEM