To provide a semiconductor device in which the excess and sag of a solder are inhibited and which has a high reliability, and to provide its manufacturing method.

The semiconductor device is constituted by comprising a C-surface heat-sink electrode 4 joined by a solder layer 3 on one side face of a semiconductor element 2, a conductor block 6 joined by the solder layer 5 on the other side face of the element 2 and an E-surface heat-sink electrode 8 joined by the solder layer 7 on the opposed surface of the joint surface of the element 2 of the block 6. A solder injection hole 11 is formed to the electrode 8, and the block 6 and the electrode 8 are joined by the solder layer 7 by a solder injected from the solder injection hole 11.

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